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Same model may have multiple batches, images only for reference.
NXPSC08650D6J Real Image
Same model may have multiple batches, images only for reference.

NXPSC08650D6J

Part No NXPSC08650D6J
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 8A DPAK / Diode Silicon Carbide Schottky 650 V 8A Surface Mount DPAK
Datasheet
NXPSC08650D6J Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr WeEn Semiconductors
Package Tape & Reel
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 230 µA @ 650 V
Capacitance @ Vr, F 260pF @ 1V, 1MHz
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
ECCN EAR99
HTSUS 8541.10.0080
Other Names 1740-NXPSC08650D6JTR,1740-NXPSC08650D6JCT,1740-NXPSC08650D6JDKR,934072084118,NXPSC08650D6J-ND
Standard Package 2,500
Win Source Part Number 1083045-NXPSC08650D6J
Ultra Librarian 3D Model Ultra Librarian NXPSC08650D6J CAD Model

Description

The WeEn Semiconductors NXPSC08650D6J is a silicon carbide Schottky diode with a maximum DC reverse voltage of 650V and an average rectified current of 8A.

  • Maximum DC Reverse Voltage: 650V
  • Average Rectified Current: 8A
  • Forward Voltage: 1.7V @ 8A
  • Reverse Recovery Time: 0ns
  • Reverse Leakage Current: 230μA @ 650V
  • Capacitance: 260pF @ 1V and 1MHz
  • Mounting Type: Surface Mountable
  • Package: TO-252-3, DPak
  • ROHS3 Compliant: Yes
  • ECCN: EAR99

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