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SUB60N04-15LT

Part No SUB60N04-15LT
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194873-SUB60N04-15LT
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUB60N04-15LT CAD Model

Description

The SUB60N04-15LT is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay. This transistor is specifically designed for applications requiring efficient switching and low on-resistance. The 'LT' designation may indicate a specific package or manufacturing process variant. This device is suitable for a variety of power management and control applications.

Applications

  • DC-DC Converters: Used for efficient voltage conversion in power supplies.
  • Load Switching: Employed to control power to various loads with minimal voltage drop.
  • Motor Control: Used in PWM (Pulse Width Modulation) circuits for motor speed control.
  • Power Management Circuits: Applied in battery management and power distribution systems.

Features

  • N-Channel MOSFET: Offers faster switching speeds compared to P-channel counterparts.
  • Low On-Resistance (RDS(on)): Minimizes power loss during switching, enhancing efficiency.
  • Fast Switching Speed: Enables high-frequency operation in switching applications.
  • Surface Mount Package: Suitable for automated assembly on PCBs.
  • Lead-Free Construction: Compliant with RoHS environmental standards.

Benefits

  • High Efficiency: Low RDS(on) reduces power dissipation, resulting in higher efficiency and less heat generation.
  • Simplified Drive Circuitry: N-Channel MOSFETs are typically easier to drive than P-channel devices.
  • Compact Design: Surface mount package allows for smaller and denser circuit layouts.
  • Reliable Performance: Robust design ensures stable and reliable operation.
  • Environmentally Compliant: Lead-free construction adheres to environmental regulations.

Additional Details

The SUB60N04-15LT is characterized by its drain-source voltage rating (VDS), gate-source voltage rating (VGS), continuous drain current (ID), and pulsed drain current (IDM). The gate threshold voltage (VGS(th)) is the voltage at which the MOSFET starts to conduct. The datasheet specifies the device's thermal resistance from junction to ambient and junction to case, which is critical for managing heat and ensuring reliable operation. External heat sinking or proper PCB thermal management techniques might be required, depending on the power dissipation in the application. Always refer to the datasheet for precise electrical characteristics and application recommendations.

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