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SQM100P10-19L_GE3

Part No SQM100P10-19L_GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 100V 93A TO263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 19mOhm at 30A, 10V
Vgs(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 350nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 14100pF at 25V
Power Dissipation (Maximum) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-263 (D2Pak)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802060-SQM100P10-19L_GE3
Ultra Librarian 3D Model Ultra Librarian SQM100P10-19L_GE3 CAD Model

Description

The Vishay Siliconix SQM100P10-19L_GE3 is a high popularity MOSFET component.

  • FET Type: P-Channel
  • Drain to Source Voltage (Vdss): 100V
  • Win Source Part Number: 802060-SQM100P10-19L_GE3
  • Power Dissipation (Max): 375W (Tc)
  • Current Rating: 93A (Tc)
  • Gate Charge (Qg): 350nC @ 10V
  • Input Capacitance (Ciss): 14100pF @ 25V
  • Rds On (Maximum) @ Id, Vgs: 19mOhm @ 30A, 10V
  • Popularity: High
  • Supply/Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.3264 $53.2224
33+ $3.1158 $102.8214
50+ $3.0106 $150.5300
72+ $2.8000 $201.6000
93+ $2.6948 $250.6164
116+ $2.5895 $300.3820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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