The SIR464DP-T1-QE3 is a Power MOSFET from Vishay Siliconix, designed for efficient power switching applications. This N-channel MOSFET utilizes Vishay's advanced TrenchFET® technology and is packaged in a PowerPAK® SO-8. The 'QE3' suffix indicates automotive qualification, making it suitable for demanding automotive applications. This MOSFET is designed for low on-resistance and fast switching speeds.

Applications:

• Automotive DC-DC Converters
• Automotive Motor Control
• Automotive Lighting
• Synchronous Rectification
• Load Switching

Features:

• Low On-Resistance (RDS(on)): Reduces conduction losses and improves efficiency.
• Fast Switching Speed: Minimizes switching losses.
• Logic Level Gate Drive: Compatible with microcontroller and logic level signals.
• TrenchFET® Power MOSFET Technology: High cell density for low on-resistance.
• PowerPAK® SO-8 Package: Compact footprint and excellent thermal performance.
• AEC-Q101 Qualified: Suitable for automotive applications.
• Halogen-Free and RoHS Compliant: Environmentally friendly.

Benefits:

• High Efficiency: Low on-resistance and fast switching minimize power losses.
• Compact Design: Small footprint allows for high-density designs.
• Simplified Gate Drive: Logic level gate drive simplifies circuit design.
• Reliable Thermal Performance: PowerPAK SO-8 package efficiently dissipates heat.
• Automotive Grade Reliability: AEC-Q101 qualification ensures reliability in harsh automotive environments.

Additional Details:

The SIR464DP-T1-QE3 features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to approximately 10-15A (depending on thermal conditions and PCB layout). The on-resistance (RDS(on)) is typically very low, minimizing power dissipation and enhancing efficiency. The gate threshold voltage (VGS(th)) is compatible with logic-level signals. The PowerPAK SO-8 package offers excellent thermal performance for efficient heat dissipation. The AEC-Q101 qualification ensures it can withstand the demanding temperature cycling and environmental conditions found in automotive applications. This MOSFET is suitable for applications requiring efficient and reliable power switching in automotive systems. The operating temperature range is typically -55°C to +175°C.