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SIHG28N65EF-GE3

Name: SIHG28N65EF-GE3
Brand: Vishay
SKU: 810231
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	SIHG28N65EF-GE3
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET N-CH 650V 28A TO-247AC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Vishay Siliconix
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) at 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	117mOhm at 14A, 10V
Vgs(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	146nC at 10V
Maximum Vgs	±30V
Input Capacitance (Ciss) (Maximum) at Vds	3249pF at 100V
Power Dissipation (Maximum)	250W (Tc)
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-247AC
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	500
MSL Level	1 (Unlimited)
Popularity	Medium
Supply and Demand Status	Limited
Win Source Part Number	810234-SIHG28N65EF-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHG28N65EF-GE3 CAD Model

Description

The Vishay Siliconix SIHG28N65EF-GE3 is a medium popularity N-channel MOSFET.

Package: TO-247AC
Maximum Drain-Source Voltage: 650V
Maximum Power Dissipation: 250W @ Tc
Maximum On-Resistance @ 14A, 10V: 117mOhm
Gate Charge @ 10V: 146nC
Continuous Drain Current @ 25°C: 28A

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
20+	$2.6050	$52.1000
47+	$2.1375	$100.4625
73+	$2.0707	$151.1611
100+	$2.0039	$200.3900
130+	$1.9371	$251.8230
173+	$1.7367	$300.4491

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 400 pieces

MOQ: 20 pcs

Order Increment : 1 pcs

Qty:

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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