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SIA449DJ-T1-GE3

Part No SIA449DJ-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 30V 12A SC70-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Maximum) at Id, Vgs 20mOhm at 6A, 10V
Vgs(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 72nC at 10V
Maximum Vgs ±12V
Input Capacitance (Ciss) (Maximum) at Vds 2140pF at 15V
Power Dissipation (Maximum) 3.5W , 19W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SC-70-6 Single
Manufacturer Package PowerPAK SC-70-6
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 808940-SIA449DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA449DJ-T1-GE3 CAD Model

Description

The SIA449DJ-T1-GE3, manufactured by Vishay Siliconix, is a P-channel MOSFET with a maximum drain-to-source voltage of 30V and a continuous drain current of 12A @ 25°C.

  • Transistor Type: P-channel MOSFET
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current @ 25°C: 12A
  • Rds On: 20mOhm @ 6A, 10V
  • Gate Charge: 72nC @ 10V
  • Mounting Type: Surface Mount
  • Package: PowerPAK SC-70-6 (Single)
  • Input Capacitance: 2140pF @ 15V
  • Vgs(th): 1.5V @ 250μA
  • Manufacturer Pack Quantity: 3,000
  • MSL Level: 1 (unlimited)
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2788 $50.1840
440+ $0.2287 $100.6280
680+ $0.2216 $150.6880
935+ $0.2144 $200.4640
1,210+ $0.2073 $250.8330
1,615+ $0.1859 $300.2285
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,986 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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