The Vishay Siliconix SI8447DB-T2-E1 is a P-Channel MOSFET that is available in a 6-Micro Foot (1.5x1) supplier device package. The product has a drive voltage of 1.7V, 4.5V and has a voltage - Drain-Source Breakdown Voltage of 20V. It has a current - Continuous Drain Current of 11A and has a Rds On (Maximum) at Id, Vgs of 75mOhm @ 1A, 4.5V. The product operates in the temperature range of -55°C to 150°C and has a power dissipation (maximum) of 2.77W, 13W. The supply and demand status for the product is limited. The manufacturer pack quantity is 1 and the MSL Level is 1 (Unlimited). The Gate Source Voltage(th) (Maximum) at Id is 1.2V @ 250μA, and the Gate Charge (Qg) (Maximum) @ Vgs is 25nC @ 10V. The Gate Source Voltage (Maximum) is ±12V, and the Input Capacitance (Ciss) (Maximum) @ Vds is 600pF @ 10V.

• Drive Voltage: 1.7V, 4.5V
• Voltage - Drain-Source Breakdown: 20V
• Current - Continuous Drain: 11A
• Rds On (Maximum) @ Id, Vgs: 75mOhm @ 1A, 4.5V
• Operating Temperature: -55°C to 150°C
• Power Dissipation (Maximum): 2.77W, 13W
• MSL Level: 1 (Unlimited)
• Gate Source Voltage(th) (Maximum) @ Id: 1.2V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V
• Gate Source Voltage (Maximum): ±12V
• Input Capacitance (Ciss) (Maximum) @ Vds: 600pF @ 10V