The SI4974DY-T1-GE3 is a P-Channel MOSFET from Vishay. It is designed for load switching and power management applications, offering efficient performance in a small footprint.

Applications

• Load Switching
• Power Management in Portable Devices
• DC-DC Conversion
• Battery Management Systems
• Boost Converters

Features

• P-Channel MOSFET
• Low On-Resistance (Rds(on))
• TrenchFET® Power MOSFET Technology
• Small Footprint
• Lead (Pb)-free and Halogen-free
• Standard Threshold Voltage

Benefits

• Efficient Load Switching: The low on-resistance minimizes power loss during switching, improving overall efficiency.
• Compact Design: The small footprint allows for high-density board layouts.
• Extended Battery Life: Reduced power dissipation contributes to longer battery life in portable devices.
• Environmentally Friendly: Lead (Pb)-free and Halogen-free construction complies with environmental regulations.
• Simplified Design: Standard threshold voltage allows for ease of use in common voltage applications.

Technical Specifications

The SI4974DY-T1-GE3 features a drain-source voltage (Vds) of -30V, a gate-source voltage (Vgs) of ±20V, and a continuous drain current (Id) of -7.1A. The on-resistance (Rds(on)) at Vgs = -10V is typically 0.021Ω, and at Vgs = -4.5V, it is typically 0.033Ω. It is available in a PowerPAK® SC-70 package. The operating junction temperature ranges from -55°C to +150°C.

This MOSFET is suitable for a wide range of applications where efficient power management and load switching are required, especially in portable and battery-powered devices. Its low on-resistance and compact size make it an excellent choice for designers looking to optimize performance and board space.