The SI4856DY-T1-E3 is an N-Channel 30 V (D-S) MOSFET from Vishay Siliconix. This MOSFET is designed for efficient power management, offering low on-resistance and fast switching speeds. It is particularly well-suited for applications requiring high efficiency and compact design.

Applications:

• Load Switching
• DC-DC Converters
• Power Management in portable devices
• Motor Control

Features:

• Low On-Resistance: Minimizes conduction losses for improved efficiency.
• Fast Switching Speed: Suitable for high-frequency applications.
• TrenchFET® Power MOSFET Technology: Offers enhanced performance and efficiency.
• Lead (Pb)-free and Halogen-free: Compliant with environmental standards.
• Compact PowerPAK® SC-70 Package: Space-saving design for high-density applications.

Benefits:

• Improved Energy Efficiency: Reduces power dissipation, leading to energy savings.
• Enhanced Thermal Performance: Excellent thermal characteristics due to the PowerPAK® SC-70 package.
• Reduced Board Space: The small form factor enables higher component density.
• Reliable Operation: Designed for robust performance in demanding applications.

Additional Details:

The SI4856DY-T1-E3 features a drain-source voltage (VDS) of 30V and a typical on-resistance (RDS(on)) of 10.5 mΩ at VGS = 10V. The gate-source voltage is rated at ±20V. The continuous drain current (ID) is typically around 9.9A. This MOSFET is designed to operate within standard temperature ranges for electronic devices. The PowerPAK® SC-70 package facilitates efficient heat transfer, crucial for stable performance under load. This device is commonly used where space is limited and high efficiency is required.