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SI34401BDY-T1-GE3

Part No SI34401BDY-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 189789-SI34401BDY-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI34401BDY-T1-GE3 CAD Model

Description

The SI34401BDY-T1-GE3 is a 30V N-Channel MOSFET from Vishay Siliconix. This MOSFET is designed for load switching, DC-DC conversion, and other power management applications. The 'GE3' suffix indicates that the component is RoHS compliant and halogen-free, catering to environmentally conscious designs.

Applications:

  • DC-DC converters
  • Load Switching
  • Power Management in portable devices
  • Backlighting in LCD displays

Features:

  • Low on-resistance: Reduces power loss and enhances efficiency.
  • High-speed switching: Enables use in high-frequency applications.
  • Logic Level Gate Drive: Allows direct drive from logic circuits.
  • TrenchFET® Power MOSFET Technology: Provides efficient switching performance.
  • RoHS Compliant and Halogen-Free: Meets environmental regulations.

Benefits:

  • Increased energy efficiency: Low on-resistance minimizes power dissipation.
  • Compact design: Allows for smaller and lighter devices.
  • Extended battery life: Efficient power management prolongs battery life in portable applications.
  • Reduced heat generation: Minimizes the need for heat sinks.
  • Environmentally friendly: RoHS compliance and halogen-free construction reduce environmental impact.

Technical Specifications:

The SI34401BDY-T1-GE3 has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. The typical on-resistance (RDS(on)) is 7.5 mΩ at VGS = 10V and 11 mΩ at VGS = 4.5V. The continuous drain current (ID) is 12 A. The device is available in a PowerPAK® SO-8 package, designed for efficient thermal management. It operates in a temperature range of -55°C to +150°C.

The TrenchFET® technology in the SI34401BDY-T1-GE3 optimizes on-resistance and switching speed, suitable for efficient power conversion. Its low gate charge minimizes gate drive losses, enhancing efficiency. The PowerPAK® SO-8 package facilitates surface mounting and effective heat dissipation, ensuring reliable operation at higher power levels. The logic-level gate drive simplifies interfacing with microcontrollers and other control circuits.

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