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Same model may have multiple batches, images only for reference.
SI1900DL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1900DL-T1-GE3

Part No SI1900DL-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2 N-CH 30V SC70-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Transistor Polarity 2 N-Channel (Dual)
FET Feature Standard
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 630mA, 590mA
Rds On (Maximum) at Id, Vgs 480mOhm at 590mA, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 1.4nC at 10V
Maximum Power 300mW, 270mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 756534-SI1900DL-T1-GE3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1900DL-T1-GE3 CAD Model

Description

The Vishay Siliconix 756534-SI1900DL-T1-GE3 is a standard FET transistor with 2 N-Channel (Dual) polarity.

  • Power: 300mW, 270mW
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 630mA, 590mA
  • Rds On (Maximum) @ Id, Vgs: 480mOhm @ 590mA, 10V
  • Gate source voltage(th) (Maximum) @ Id: 3V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: -
  • Operating Temperature: -55°C ~ 150°C
  • Package: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6

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1,705+ $0.2035 $346.9675
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