IRLZ14 Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 200mOhm at 6A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.4nC at 5V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 400pF at 25V
Power Dissipation (Maximum) 43W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188685-IRLZ14
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRLZ14 CAD Model

Description

The 1188685-IRLZ14 is an N-channel MOSFET manufactured by Vishay Siliconix.

  • Package: TO-220AB
  • Mounting: Through Hole
  • Maximum Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 10A
  • Rds On: 200mOhm @ 6A and 5V
  • Gate Charge: 8.4nC @ 5V
  • Gate-Source Voltage Threshold: 2V @ 250μA
  • Maximum Gate-Source Voltage: ±10V
  • Input Capacitance: 400pF @ 25V
  • Application: Power Management

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6520 $58.6800
210+ $0.5350 $112.3500
325+ $0.5182 $168.4150
450+ $0.5015 $225.6750
580+ $0.4848 $281.1840
775+ $0.4347 $336.8925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 239 pieces
MOQ: 90 pcs
Order Increment : 1 piece
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