IRFR120 Vishay
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 7.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 270mOhm at 4.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 16nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 360pF at 25V
Power Dissipation (Maximum) 2.5W, 42W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1187860-IRFR120
Manufacturer Homepage www.intersil.com/cda/home
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR120 CAD Model

Description

The Vishay Siliconix IRFR120 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2.5W, 42W
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On: 270mOhm @ 4.6A, 10V
  • Gate-Source Voltage(th): 4V @ 250μA
  • Package: D-Pak
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9780 $58.6800
140+ $0.8025 $112.3500
220+ $0.7774 $171.0280
300+ $0.7523 $225.6900
390+ $0.7272 $283.6080
520+ $0.6520 $339.0400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 5,250 pieces
MOQ: 60 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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