The 3N80L-TF1-T is a Power MOSFET from UTC (Unisonic Technologies Co., Ltd.). It is an N-channel enhancement mode MOSFET, optimized for high voltage and high efficiency switching applications. Featuring low gate charge and robust design, it is suitable for a variety of power electronics applications.

Applications

• Switching Power Supplies (SMPS)
• Power Factor Correction (PFC)
• DC-DC Converters
• Electronic Ballasts
• LED Lighting
• Adapter and Charger Circuits

Features

• N-Channel Enhancement Mode
• High Voltage: 800V
• Low On-Resistance (RDS(on))
• Low Gate Charge
• Avalanche Ruggedness
• Fast Switching Speed

Benefits

• High Efficiency
• Reduced Switching Losses
• Improved System Reliability
• Simplified Drive Circuitry
• Higher Power Density
• Excellent Thermal Performance

Additional Details

The 3N80L-TF1-T has a drain-source voltage (VDS) rating of 800V and a continuous drain current (ID) of 3A. It features a low on-resistance (RDS(on)) to minimize conduction losses. The low gate charge reduces switching losses and simplifies the gate drive requirements. The device is packaged in a TO-220F package (TF1). Its avalanche ruggedness ensures that it can withstand voltage transients and spikes. It is designed to operate over a wide temperature range, typically from -55°C to +150°C. The fast switching speed allows for higher frequency operation, further improving efficiency. It is engineered for reliable performance in demanding power applications, making it a suitable choice for various power electronic systems. It offers a balance of high voltage, low on-resistance, and fast switching speed, contributing to efficient and reliable power conversion.