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2N60L-TF3-T

Part No 2N60L-TF3-T
Manufacturer UTC
Catalog Miscellaneous
Description 2A, 600V N-CHANNEL POWER MOSFET
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Categories Uncategorized
Manufacturer UTC
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 815080-2N60L-TF3-T
Ultra Librarian 3D Model Ultra Librarian 2N60L-TF3-T CAD Model

Description

The 2N60L-TF3-T is an N-channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It's designed for high-voltage, high-speed switching applications. This MOSFET offers a low on-resistance (RDS(on)) and gate charge, contributing to efficient power conversion and reduced switching losses.

Applications

  • Switching power supplies: Used as a switching element in AC-DC and DC-DC power supplies.
  • Motor control: Driving motors in various applications, including industrial and consumer products.
  • DC-DC converters: Converting DC voltage levels in electronic circuits.
  • LED lighting: Driving and controlling LEDs in lighting systems.
  • Power inverters: Converting DC power to AC power.

Features

  • N-channel enhancement mode: Simple gate drive requirements.
  • Low on-resistance (RDS(on)): Minimizes conduction losses.
  • Low gate charge (Qg): Reduces switching losses.
  • High avalanche energy (EAS): Provides robustness against transient voltage spikes.
  • Fast switching speed: Enables high-frequency operation.

Benefits

  • High efficiency: Low RDS(on) and gate charge minimize power losses, improving overall system efficiency.
  • Reduced heat dissipation: Lower power losses result in less heat generation, simplifying thermal management.
  • Improved reliability: High avalanche energy capability enhances robustness and reliability.
  • Compact design: The device is available in a compact package, enabling space-saving designs.
  • Simplified circuit design: N-channel enhancement mode simplifies gate drive circuitry.

Additional Details

The 2N60L-TF3-T typically has a drain-source voltage (VDS) rating of 600V and a continuous drain current (ID) rating that depends on the case temperature. It's available in a TO-251 or TO-252 package. The gate threshold voltage (VGS(th)) is typically between 2V and 4V. It's important to consult the datasheet for the specific ratings and characteristics of the device, including the RDS(on) value at a specified gate-source voltage and drain current, the gate charge parameters, and the thermal resistance. Proper heat sinking is often required to ensure reliable operation at high currents.

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