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Same model may have multiple batches, images only for reference.
TP65H035G4WS Transphorm
Same model may have multiple batches, images only for reference.

TP65H035G4WS

Part No TP65H035G4WS
Manufacturer Transforming Technologies, LLC
Catalog FETs - Single
Description GANFET N-CH 650V 46.5A TO247-3
Datasheet
TP65H035G4WS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1306402-TP65H035G4WS
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr Transphorm
Packaging Tube
Part Status Active
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Ultra Librarian 3D Model Ultra Librarian TP65H035G4WS CAD Model

Description

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by  Wide gate safety margin Transient over-voltage capability
  • Enhanced inrush current capability 
  • Very low QRR
  • Reduced crossover loss

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