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Same model may have multiple batches, images only for reference.
TRS12E65C,S1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TRS12E65C,S1Q

Part No TRS12E65C,S1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 12A TO220-2L / Rectifier Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220-L Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 650V
Current - Average Rectified (Io) 12A (DC)
Voltage - Forward (Vf) (Maximum) @ If 1.7V @ 12A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 90μA @ 170V
Capacitance @ Vr, F 65pF @ 650V, 1MHz
Mounting Style Through Hole
Package TO-220-2
Manufacturer Package TO-220-2L
Operating Temperature - Junction 175°C (Maximum)
Win Source Part Number 798372-TRS12E65C,S1Q
Popularity Medium
Supply and Demand Status Limited
Family Name TRS12E65C
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian TRS12E65C,S1Q CAD Model

Description

The TRS12E65C silicon carbide Schottky diode is manufactured by Toshiba Semiconductor and Storage.

  • Average Rectified Current (Io): 12A (DC)
  • Maximum Voltage Forward (Vf): 1.7V @ 12A
  • Maximum Voltage DC Reverse (Vr): 650V
  • Capacitance: 65pF @ 650V, 1MHz
  • Operating Temperature Range: Up to 175°C
  • Recovery Time: No recovery time > 500mA (Io)
  • Category: Discrete Semiconductor Products
  • Packaging: Tube
  • Supply and Demand Status: Limited

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