The TPCA8082 is a high-performance N-channel power MOSFET developed by Toshiba Semiconductor and Storage. It is designed for efficient power management in a variety of applications, featuring a low drain-source on-resistance (RDS(ON)) which minimizes power loss during switching operations, leading to improved energy efficiency. This MOSFET employs advanced trench gate technology to enhance its switching performance and overall reliability.

Applications

• DC-DC converters
• Load switching
• Power management in portable electronics
• Motor control
• LED lighting systems

Features

• Low drain-source on-resistance (RDS(ON)) for reduced power dissipation
• High-speed switching capability for efficient operation
• Advanced trench gate structure for improved performance
• Optimized for 4.5V gate drive, making it suitable for battery-powered applications
• Available in a small surface-mount package for space-saving designs
• Pb-free and RoHS compliant

Benefits

• Improved energy efficiency in power conversion circuits
• Reduced heat generation, enhancing system reliability
• Compact solution for space-constrained environments
• Simplified thermal management due to low RDS(ON)
• Meets environmental regulations

Additional Details

The TPCA8082 typically features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 7A, depending on specific application conditions and thermal management. The gate-source voltage (VGSS) is rated at ±20V. The RDS(ON) is typically specified at 24 mΩ at VGS = 10V, and 40 mΩ at VGS = 4.5V. The device is commonly packaged in an SOP-8 format. The operating and storage temperature ranges are typically between -55°C and 150°C. These attributes render the TPCA8082 well-suited for applications in battery-powered devices and other scenarios where size and efficiency are paramount. Its robust design ensures reliable performance even under demanding operating conditions.