The TPCA8063-H is an N-channel power MOSFET from Toshiba Semiconductor and Storage, engineered for high-efficiency power management. It features a low drain-source on-resistance (RDS(ON)), which minimizes power loss during switching transitions. This results in improved energy efficiency and reduced heat generation. The device is manufactured using advanced trench gate technology, contributing to its superior performance and reliability.

Applications

• DC-DC converters
• Load switching
• Power management circuits in portable devices
• Motor control applications
• LED lighting systems

Features

• Low drain-source on-resistance (RDS(ON)) for reduced power loss
• High-speed switching capability for efficient operation
• Advanced trench gate structure for enhanced performance
• Optimized for 4.5V gate drive
• Available in a small surface-mount package for space-saving designs
• Pb-free and RoHS compliant

Benefits

• Improved energy efficiency in power conversion systems
• Reduced heat generation, enhancing system reliability
• Compact design for space-constrained applications
• Simplified thermal management due to low RDS(ON)
• Meets environmental regulations

Additional Details

The TPCA8063-H typically features a maximum drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 10A, depending on the specific application and thermal conditions. Its gate-source voltage (VGSS) is rated at ±20V. The device's low gate charge (Qg) contributes to its fast switching speed. The operating and storage temperature range is typically between -55°C and 150°C. The RDS(ON) is typically specified at 12.5 mΩ at VGS = 10V, and 20 mΩ at VGS = 4.5V. The package is typically SOP-8. These characteristics make the TPCA8063-H well-suited for battery-powered devices and other applications where efficiency and size are critical. Its robust design ensures reliable operation in demanding environments.