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TPC8047-H(TE12L

Part No TPC8047-H(TE12L
Manufacturer Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 840856-TPC8047-H(TE12L
Ultra Librarian 3D Model Ultra Librarian TPC8047-H(TE12L CAD Model

Description

The TPC8047-H is an N-channel MOS field-effect transistor (MOSFET) manufactured by Toshiba Semiconductor and Storage, designed for power management applications, particularly in DC-DC converters and load switching circuits. This device is characterized by its low on-state resistance and fast switching speeds, making it suitable for efficient power conversion and control.

Applications:

  • DC-DC Converters: Used in voltage regulation and power conversion systems.
  • Load Switches: Implemented for efficient power distribution in various electronic systems.
  • Power Management in Portable Devices: Employed to optimize battery life and reduce heat in devices like laptops and smartphones.
  • Motor Control Circuits: Used in controlling the speed and torque of small motors.
  • Synchronous Rectification: Applied to improve the efficiency of power supplies.

Features:

  • Low On-State Resistance (R<sub>DS(ON)): Reduces power loss and heat generation during operation.
  • Fast Switching Speed: Enables efficient operation in high-frequency applications.
  • Logic Level Drive: Allows direct driving from low-voltage control circuits.
  • Surface Mount Package: Facilitates automated assembly and reduces board space.

Benefits:

  • Improved Energy Efficiency: Low R<sub>DS(ON) contributes to reduced power losses and enhanced energy efficiency.
  • Reduced Heat Generation: Lower power dissipation results in reduced heat, improving system reliability.
  • Simplified Circuit Design: Logic level drive simplifies the interface with control circuits.
  • Compact Size: Surface mount package allows for smaller and more compact designs.
  • Enhanced System Reliability: Reduced operating temperatures and robust design improve the overall reliability of the system.

Technical Specifications (Typical):

  • Drain-Source Voltage (V<sub>DSS): 30V
  • Gate-Source Voltage (V<sub>GSS): ±20V
  • Continuous Drain Current (I<sub>D): 8A (depending on conditions)
  • On-State Resistance (R<sub>DS(ON)): 18 mΩ (at V<sub>GS = 10V)
  • Total Gate Charge (Q<sub>g): 9 nC
  • Operating Temperature Range: -55°C to 150°C
  • Package: SOP-8

The TPC8047-H(TE12L) MOSFET from Toshiba is a reliable component for various power management applications. Its low on-resistance, fast switching speed, and compact package make it suitable for modern electronic designs where efficiency and space are key considerations.

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