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TPC8027

Part No TPC8027
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 219732-TPC8027
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8027 CAD Model

Description

The TPC8027 is an N-channel MOSFET from Toshiba Semiconductor and Storage, designed for high-efficiency power management applications. This device leverages Toshiba's advanced trench MOSFET process to deliver a combination of low on-resistance and fast switching speeds, making it well-suited for demanding power control circuits. Its compact form factor and robust design contribute to its versatility across a variety of applications.

Applications

  • DC-DC converters
  • Load switches
  • Power management in portable devices
  • Motor control circuits
  • LED lighting systems

Features

  • Low On-Resistance: Minimizes conduction losses, improving overall efficiency.
  • Fast Switching Speed: Reduces switching losses, enabling higher frequency operation.
  • Small Package: Contributes to compact designs, saving board space.
  • High Avalanche Capability: Provides increased robustness against transient voltage spikes.
  • RoHS Compliant: Meets environmental regulations.

Benefits

  • Improved Efficiency: Low on-resistance and fast switching minimize power losses, leading to higher efficiency in power conversion circuits.
  • Reduced Heat Generation: Lower power losses translate to less heat dissipation, simplifying thermal management.
  • Compact Design: The small package allows for denser circuit layouts, saving valuable board space.
  • Enhanced Reliability: High avalanche capability provides increased protection against voltage transients, improving system reliability.
  • Environmentally Friendly: RoHS compliance ensures adherence to environmental regulations.

Additional Details

The TPC8027 features a drain-source voltage (V<sub>DSS) of 30V and a continuous drain current (I<sub>D) of up to 7A, depending on the specific package and thermal conditions. Its gate-source voltage (V<sub>GS) is rated at ±20V. The device is typically available in a small surface-mount package, such as SOP-8, facilitating automated assembly. The operating temperature range extends from -55°C to +150°C. The on-resistance (R<sub>DS(on)) is typically in the range of 15 mΩ at V<sub>GS = 10V. These parameters make it suitable for low-voltage, high-current applications where efficiency and space are critical considerations.

Careful attention should be paid to thermal management when using the TPC8027 at high currents. Proper heatsinking or PCB layout techniques may be necessary to ensure that the device operates within its safe operating area. Consult the Toshiba datasheet for detailed specifications and application guidelines.

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