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TPC8001

Part No TPC8001
Manufacturer Toshiba Semiconductor and Storage
Catalog HOT - SALES and EOL Components (T)
Description Silicon N Channel MOS Type (MOSVI)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 375489-TPC8001
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8001 CAD Model

Description

The TPC8001 is a sophisticated N-channel MOS field-effect transistor (MOSFET) from Toshiba Semiconductor and Storage, designed for high-efficiency power management applications. This device is fabricated using advanced process technology to achieve low on-resistance and high-speed switching, making it suitable for a wide array of power control circuits.

Applications

  • DC-DC converters
  • Load switching
  • Power management in portable devices
  • Motor control circuits
  • Backlight inverters

Features

  • Low drain-source on-resistance (RDS(ON)) for reduced power loss
  • High-speed switching capability
  • Low gate charge (Qg) for efficient driving
  • Avalanche-proof capability
  • Pb-free plating; halogen-free

Benefits

  • Improved energy efficiency due to reduced conduction losses
  • Enhanced system performance through fast switching speeds
  • Simplified gate drive circuitry due to low gate charge requirements
  • Increased system reliability due to avalanche ruggedness
  • Compliance with environmental standards, contributing to greener designs

Detailed Specs

The TPC8001 boasts a low drain-source on-resistance, typically around 15 mΩ at a gate-source voltage (VGS) of 10V. It's capable of handling a continuous drain current (ID) of up to 12A, making it suitable for moderate to high power applications. The gate threshold voltage (Vth) is typically around 2.0V, ensuring compatibility with common logic-level drive voltages. This MOSFET is designed to operate with a maximum drain-source voltage (VDS) of 30V. The device is typically available in a small surface mount package, allowing for compact designs. It also exhibits excellent thermal characteristics, ensuring stable operation even under heavy load conditions. The low RDS(ON) minimizes power dissipation, leading to cooler operation and improved overall system reliability. The fast switching speed reduces switching losses, further improving efficiency in high-frequency applications. The TPC8001 is an ideal choice for designers seeking a reliable and efficient MOSFET for power management applications.

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