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TK5Q60V

Part No TK5Q60V
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 217537-TK5Q60V
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK5Q60V CAD Model

Description

The TK5Q60V is a silicon N-channel MOSFET from Toshiba, designed for high-voltage, high-current power switching applications. It is fabricated using Toshiba's advanced process technology, which enables low on-resistance and fast switching speeds, leading to improved efficiency and reduced power loss in various electronic circuits.

Applications

  • Switching Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC converters
  • Motor control circuits
  • Lighting ballasts

Features

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall efficiency.
  • High-Speed Switching: Reduces switching losses, enabling higher frequency operation.
  • High Avalanche Capability: Provides robustness against voltage transients.
  • Enhancement Mode: Simplifies gate drive circuitry.
  • RoHS Compliant: Environmentally friendly, adhering to RoHS standards.

Benefits

  • Improved Efficiency: Lower RDS(on) and faster switching speeds contribute to reduced power dissipation and higher efficiency in power conversion systems.
  • Reduced Heat Generation: Lower power losses result in less heat generation, simplifying thermal management.
  • Enhanced Reliability: High avalanche capability and robust design ensure reliable operation under demanding conditions.
  • Simplified Design: Enhancement mode operation simplifies gate drive requirements, reducing component count and cost.
  • Environmentally Compliant: Meets RoHS standards, making it suitable for environmentally conscious applications.

Technical Specifications

  • Drain-Source Voltage (VDSS): 600V
  • Gate-Source Voltage (VGSS): ±30V
  • Continuous Drain Current (ID): 5A
  • Pulsed Drain Current (IDM): 15A
  • Maximum Power Dissipation (PD): 35W
  • Operating Temperature Range: -55°C to 150°C
  • RDS(on) (VGS=10V): 1.75Ω (typical)
  • Gate Charge (Qg): 9.5nC (typical)
  • Package: TO-220SIS

The TK5Q60V MOSFET provides a combination of performance, reliability, and efficiency, making it well-suited for a variety of power switching applications. Its low on-resistance, high-speed switching, and robust design enable efficient and reliable operation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2727 $50.4495
450+ $0.2238 $100.7100
695+ $0.2168 $150.6760
955+ $0.2098 $200.3590
1,235+ $0.2028 $250.4580
1,655+ $0.1818 $300.8790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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