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TK5A60V

Part No TK5A60V
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 217533-TK5A60V
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK5A60V CAD Model

Description

The TK5A60V is a silicon N-channel MOSFET from Toshiba, designed for high-voltage power switching applications. This MOSFET utilizes Toshiba's advanced process technology to achieve low on-resistance and excellent switching performance, contributing to improved efficiency and reduced power loss in various electronic circuits.

Applications

  • Switching Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC converters
  • Motor control circuits
  • Lighting ballasts

Features

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall efficiency.
  • High-Speed Switching: Reduces switching losses, enabling higher frequency operation.
  • High Avalanche Capability: Provides robustness against voltage transients.
  • Enhancement Mode: Simplifies gate drive circuitry.
  • RoHS Compliant: Environmentally friendly, adhering to RoHS standards.

Benefits

  • Improved Efficiency: Lower RDS(on) and faster switching speeds contribute to reduced power dissipation and higher efficiency in power conversion systems.
  • Reduced Heat Generation: Lower power losses result in less heat generation, simplifying thermal management.
  • Enhanced Reliability: High avalanche capability and robust design ensure reliable operation under demanding conditions.
  • Simplified Design: Enhancement mode operation simplifies gate drive requirements, reducing component count and cost.
  • Environmentally Compliant: Meets RoHS standards, making it suitable for environmentally conscious applications.

Technical Specifications

  • Drain-Source Voltage (VDSS): 600V
  • Gate-Source Voltage (VGSS): ±30V
  • Continuous Drain Current (ID): 5A
  • Pulsed Drain Current (IDM): 15A
  • Maximum Power Dissipation (PD): 35W
  • Operating Temperature Range: -55°C to 150°C
  • RDS(on) (VGS=10V): 1.75Ω (typical)
  • Gate Charge (Qg): 9.5nC (typical)
  • Package: TO-220SIS

The TK5A60V MOSFET offers a compelling combination of performance, reliability, and efficiency, making it well-suited for a wide range of power switching applications. Its low on-resistance, high-speed switching, and robust design ensure efficient and reliable operation in demanding environments.

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