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TK100E10NE

Part No TK100E10NE
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 217116-TK100E10NE
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK100E10NE CAD Model

Description

The TK100E10NE is an N-channel power MOSFET from Toshiba Semiconductor and Storage. This device is specifically engineered for high-efficiency power conversion and control in various applications. Its key attributes include a low on-resistance, which minimizes conduction losses, and a fast switching speed, which reduces switching losses. These features contribute to increased overall system efficiency and performance. The TK100E10NE is commonly available in a through-hole package, suitable for applications where reliable mechanical mounting and heat dissipation are essential.

Applications:

  • Switching power supplies
  • Motor drives
  • DC-DC converters
  • Uninterruptible Power Supplies (UPS)
  • High-frequency power conversion circuits

Features:

  • N-channel MOSFET
  • Low drain-source on-resistance (RDS(on)): Enables higher efficiency by minimizing conduction losses.
  • High drain current (ID): Allows for handling substantial power loads.
  • Fast switching speed: Reduces switching losses, leading to improved efficiency at higher frequencies.
  • Through-hole package: Provides robust mounting and effective heat dissipation.
  • Avalanche energy rating: Enhances ruggedness and reliability.

Benefits:

  • Increased efficiency: Low on-resistance and fast switching minimize power losses.
  • Improved thermal performance: Through-hole package allows for effective heat dissipation.
  • Higher power density: Handles significant power in a compact form factor.
  • Enhanced reliability: Avalanche energy rating provides robustness against voltage transients.
  • Simplified design: Easy to implement and integrate into power electronic circuits.

Additional Details:

The TK100E10NE typically features a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) rating specific to its operating conditions, as detailed in the datasheet. The gate-source voltage (VGS) rating usually stands at ±20V. This MOSFET often employs advanced trench technology, optimizing on-resistance and switching characteristics. Proper gate drive and thermal management are essential for achieving optimal performance and ensuring longevity. Designers should always refer to the official datasheet for precise electrical characteristics and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1435 $62.8925
125+ $0.9379 $117.2375
195+ $0.9090 $177.2550
265+ $0.8801 $233.2265
340+ $0.8501 $289.0340
455+ $0.7623 $346.8465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,420 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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