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TH58NYG3S0HBAI6

Part No TH58NYG3S0HBAI6
Manufacturer Toshiba Semiconductor and Storage
Catalog IT infrastructure Memory
Description 8Gb NAND Flash SLC
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1452612-TH58NYG3S0HBAI6
Manufacturer Toshiba Semiconductor and Storage
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 8Gbit
Memory Organization 1G x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)
Ultra Librarian 3D Model Ultra Librarian TH58NYG3S0HBAI6 CAD Model

Description

The TH58NYG3S0HBAI6, a product of KIOXIA/Toshiba, is an advanced 8Gb (Gigabit) NAND Flash memory module designed for high reliability and performance. Falling under the Flash Memory [NAND/NOR] category, this SLC (Single-Level Cell) NAND Flash offers superior durability and speed, characteristics pivotal for storing operating systems, critical application data, and in environments requiring frequent write/erase cycles. With 8Gb of storage, it provides ample space for a range of applications from industrial to consumer electronics. The efficiency and reliability of the TH58NYG3S0HBAI6 make it a preferred choice for developers and manufacturers seeking memory solutions that offer a balance between performance and longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.0909 $52.3636
10+ $10.7413 $107.4130
15+ $10.4056 $156.0840
20+ $10.0700 $201.4000
26+ $9.7343 $253.0918
35+ $8.7273 $305.4555
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,003 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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