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TH58NVG8D2ELAM9-UC2

Part No TH58NVG8D2ELAM9-UC2
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Sample
Rohs State rohs
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Category Integrated Circuits(ICs)
Family Memory
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 216931-TH58NVG8D2ELAM9-UC2
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TH58NVG8D2ELAM9-UC2 CAD Model

Description

The TH58NVG8D2ELAM9-UC2 is a NAND flash memory component from Toshiba Semiconductor and Storage. It's designed for use in various storage applications requiring high capacity and reliability. This chip provides non-volatile storage, maintaining data even when power is off.

Applications

  • Solid State Drives (SSDs)
  • USB Flash Drives
  • Memory Cards (SD, microSD)
  • Embedded Systems
  • Mobile Devices (Smartphones, Tablets)

Features

  • High-Density NAND Flash Memory: Provides a large storage capacity.
  • Multi-Level Cell (MLC) Technology: Allows storing multiple bits of data per cell.
  • High-Speed Data Transfer: Enables fast read and write operations.
  • Low Power Consumption: Designed for energy-efficient operation.
  • Compact Package: Allows integration into small form factor devices.
  • Reliable Data Storage: Ensures data integrity and longevity.

Benefits

  • Increased Storage Capacity: Enables devices to store more data.
  • Faster Performance: Improves application loading times and overall system responsiveness.
  • Extended Battery Life: Reduces power consumption, prolonging device usability.
  • Smaller Device Size: Allows for sleeker and more portable devices.
  • Enhanced Data Security: Provides reliable data storage and protection.

Additional Details

The TH58NVG8D2ELAM9-UC2 uses NAND flash memory architecture, which provides non-volatile storage. It uses MLC technology, which stores multiple bits of data within a single memory cell, effectively increasing storage density. The device operates within specified voltage and temperature ranges. You can find detailed technical specifications, including capacity, voltage requirements, and operating temperatures, in the official Toshiba datasheet.

It is commonly used in applications that require high-density, high-performance storage solutions. Its compatibility with various host controllers and interfaces makes it suitable for a wide range of products. This NAND flash memory is engineered to meet the requirements of modern electronic devices, ensuring high performance and reliability.

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