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TH58NVG6D1DTG20

Part No TH58NVG6D1DTG20
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits(ICs)
Family Memory
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 216925-TH58NVG6D1DTG20
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TH58NVG6D1DTG20 CAD Model

Description

The TH58NVG6D1DTG20 is a NAND Flash memory device manufactured by Toshiba Semiconductor and Storage. This integrated circuit is designed for use in a variety of storage applications, offering high density and performance in a compact form factor. It is a critical component for enabling data storage in modern electronic devices.

Applications

  • Solid State Drives (SSDs)
  • USB Flash Drives
  • Memory Cards (SD, microSD)
  • Embedded Systems
  • Mobile Devices (Smartphones, Tablets)

Features

  • High Density NAND Flash Memory: Offers significant storage capacity.
  • Multi-Level Cell (MLC) Technology: Stores multiple bits of data per cell, increasing density.
  • High-Speed Data Transfer: Enables rapid read and write operations.
  • Low Power Consumption: Designed for energy-efficient operation.
  • Compact Package: Allows for integration into small form factor devices.
  • Reliable Data Storage: Ensures data integrity and longevity.

Benefits

  • Increased Storage Capacity: Enables devices to store more data.
  • Faster Performance: Improves application loading times and overall system responsiveness.
  • Extended Battery Life: Reduces power consumption, prolonging device usability.
  • Smaller Device Size: Allows for sleeker and more portable devices.
  • Enhanced Data Security: Provides reliable data storage and protection.

Additional Details

The TH58NVG6D1DTG20 utilizes a NAND flash memory architecture, providing non-volatile storage capabilities. This means that the data is retained even when the power is turned off. The device employs MLC technology, which allows for storing multiple bits of data within a single memory cell, effectively increasing the storage density. The device is designed to operate within a specific voltage and temperature range, ensuring stable and reliable performance. Detailed technical specifications, including capacity, voltage requirements, and operating temperatures, can be found in the official Toshiba datasheet for this part number.

The device is commonly used in applications requiring high-density, high-performance storage solutions. Its compatibility with various host controllers and interfaces makes it suitable for a wide range of products. The NAND flash memory is carefully engineered to meet the demanding requirements of modern electronic devices, ensuring optimal performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $26.0857 $78.2571
6+ $21.4045 $128.4270
9+ $20.7357 $186.6213
12+ $20.0670 $240.8040
15+ $19.3971 $290.9565
20+ $17.3908 $347.8160
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,800 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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