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Same model may have multiple batches, images only for reference.
TH58NVG3S0HBAI4 Real Image
Same model may have multiple batches, images only for reference.

TH58NVG3S0HBAI4

Part No TH58NVG3S0HBAI4
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Description 8GB SLC NAND 24NM BGA 9X11 3.3V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 8Gb (1G x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Supply Voltage (V) 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)
Manufacturer Pack Quantity 210
MSL Level 3 (168 Hours)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813921-TH58NVG3S0HBAI4
Ultra Librarian 3D Model Ultra Librarian TH58NVG3S0HBAI4 CAD Model

Description

{"ProductId":752216,"FormattedDescription":"

This electronic component is a non-volatile memory product from Toshiba Semiconductor and Storage.

  • Package: 63-TFBGA (9x11)
  • Memory Size: 8Gb (1G x 8)
  • Operating Temperature: -40°C ~ 85°C
  • Write Cycle Time - Word, Page: 25ns
  • Memory Interface: Parallel
"}

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