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Same model may have multiple batches, images only for reference.
TC58NVG2S0HBAI6 Real Image
Same model may have multiple batches, images only for reference.

TC58NVG2S0HBAI6

Part No TC58NVG2S0HBAI6
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description IC FLASH 4G PARALLEL 67VFBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 4Gb (512M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Supply Voltage (V) 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)
Manufacturer Pack Quantity 338
MSL Level 3 (168 Hours)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806972-TC58NVG2S0HBAI6
Ultra Librarian 3D Model Ultra Librarian TC58NVG2S0HBAI6 CAD Model

Description

The TC58NVG2S0HBAI6 is a 4Gb NAND Flash memory chip from Toshiba Semiconductor and Storage.

  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: parallel
  • Write Cycle Time: 25ns per word and page
  • Package: 67-VFBGA (6.5x8)
  • Supplier Device Package: 67-VFBGA (6.5x8)
  • Maximum Access Time: 25ns
  • Supply Voltage Range: 2.7V to 3.6V
  • Supply and Demand Status: balance

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Quantity Unit Price Ext. Price
7+ $7.5672 $52.9704
17+ $6.2090 $105.5530
25+ $6.0150 $150.3750
35+ $5.8209 $203.7315
45+ $5.6269 $253.2105
60+ $5.0448 $302.6880
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Availability: 3,000 pieces
MOQ: 7 pcs
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