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Same model may have multiple batches, images only for reference.
TC58NVG1S3HBAI6 Real Image
Same model may have multiple batches, images only for reference.

TC58NVG1S3HBAI6

Part No TC58NVG1S3HBAI6
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description NAND Flash Memory(SLC Middle Capacity) | IC FLASH 2G PARALLEL 67VFBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Toshiba Memory America, Inc.
Packaging Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 2Gb (256M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Supply Voltage (V) 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)
Manufacturer Pack Quantity 338
MSL Level 3 (168 Hours)
Win Source Part Number 1264763-TC58NVG1S3HBAI6
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TC58NVG1S3HBAI6 CAD Model

Description

The TC58NVG1S3HBAI6 is a 2Gb (256M x 8) non-volatile memory manufactured by Toshiba Memory America, Inc.

  • Flash-nand (SLC) technology
  • Write Cycle Time - Word, Page: 25ns
  • Temperature Range: -40°C to 85°C
  • Memory Interface: Parallel
  • Mounted with SMD Technology
  • Packaged in a Tray
  • Manufacturer Pack Quantity: 338
  • MSL Level: 3 (168 Hours)
  • Supply Voltage (V): 2.7V ~ 3.6V
  • Medium Popularity
  • Limited Supply and Demand Status

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.5024 $60.0576
57+ $2.0534 $117.0438
88+ $1.9891 $175.0408
120+ $1.9251 $231.0120
156+ $1.8609 $290.3004
208+ $1.6683 $347.0064
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Availability: 13,920 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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