The TC55257P-10 is a high-speed 262,144-bit (32,768 words x 8 bits) Static Random Access Memory (SRAM) manufactured by Toshiba Semiconductor and Storage. The '-10' in the part number indicates an access time of 10ns (nanoseconds), signifying very fast data retrieval. This SRAM is designed for applications demanding quick access times and moderate memory capacity.

Applications

• Cache memory for microprocessors
• Embedded systems
• High-speed data acquisition
• Networking equipment
• Graphics processing

Features

• Organization: 32,768 words x 8 bits (32K x 8)
• Access Time: 10 ns (nanoseconds)
• Power Supply Voltage: 5V (Volts)
• Operating Current: (Consult the datasheet for specific values)
• Standby Current: Low standby current for power saving
• Package Type: DIP (Dual In-line Package) (consult datasheet for exact package)
• Operating Temperature Range: Commercial (consult datasheet for precise range)

Benefits

• Extremely Fast Access Time: Enables quick data retrieval, improving overall system performance.
• Easy to Interface: Standard memory interface simplifies integration with microprocessors and microcontrollers.
• Reliable Performance: Toshiba's manufacturing ensures dependable operation.
• Low Standby Current: Reduces power consumption in inactive states.

Additional Details

The TC55257P-10 utilizes CMOS technology to balance speed and power consumption. The datasheet for this part number provides comprehensive details regarding power consumption, timing characteristics, and recommended operating conditions. It is crucial to refer to the datasheet before integrating this component into any design to ensure proper functionality and prevent potential damage. The 'P' in the part number indicates the package type, which is typically a DIP package for through-hole mounting. This SRAM is well-suited for applications where quick data access is a critical requirement.