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TC55257DPI-85L

Part No TC55257DPI-85L
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Description 32,768 WORD x 8 BIT STATIC RAM
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1264695-TC55257DPI-85L
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TC55257DPI-85L CAD Model

Description

The TC55257DPI-85L is a high-speed, low-power 262,144-bit (32,768 words x 8 bits) static random access memory (SRAM) manufactured by Toshiba Semiconductor and Storage. This device is designed for applications requiring fast access times and low power consumption, such as cache memory, buffer memory, and battery-backed systems.

Applications

  • Cache memory in microprocessor systems.
  • Buffer memory in data acquisition systems.
  • Battery-backed memory for storing critical data in portable devices.
  • Memory in industrial control systems.
  • Memory in telecommunications equipment.

Features

  • Density: 262,144 bits (32,768 words x 8 bits)
  • Access Time: 85 ns
  • Supply Voltage: 5V
  • Operating Current: Low operating current for reduced power consumption.
  • Standby Current: Ultra-low standby current for battery-backed applications.
  • Data Retention Voltage: Low data retention voltage for reliable operation in battery-backed mode.
  • Package Options: 28-Pin DIP

Benefits

  • High Speed: Fast access times enable quick data retrieval, improving system performance.
  • Low Power Consumption: Minimizes power drain, extending battery life in portable applications.
  • Battery Backup Capability: Allows for reliable data storage in the event of power loss.
  • High Reliability: Offers robust performance in demanding environments.
  • Easy to Use: Standard interface simplifies integration into existing systems.

The TC55257DPI-85L utilizes CMOS technology to achieve low power consumption and high performance. The device is designed to operate over a wide temperature range. The static nature of the memory eliminates the need for refresh cycles, simplifying the system design. The device is TTL compatible, ensuring easy interfacing with standard logic circuits. The low data retention voltage enables reliable operation in battery-backed mode, even when the supply voltage is low. The fast access time of 85ns contributes to the overall system performance. The device is packaged in a standard 28-Pin DIP package, facilitating easy insertion into circuit boards. The memory array is organized as 32,768 words by 8 bits, providing a convenient data structure for many applications. The device is designed to meet stringent quality standards to ensure high reliability.

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