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Same model may have multiple batches, images only for reference.
SSM6J08FUTE85LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6J08FUTE85LF

Part No SSM6J08FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET P-CH 20V 1.3A US6
Datasheet
SSM6J08FUTE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Rds On (Max) @ Id, Vgs 180 mOhm @ 650mA, 4V
Input Capacitance (Ciss) @ Vds 370pF @ 10V
Power - Max 300mW
Operating Temperature Range 150°C (TJ)
Mounting Style SMD/SMT
Package 6-TSSOP, SC-88, SOT-363
Manufacturer Device Package US6
Win Source Part Number 098488-SSM6J08FUTE85LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6J08FUTE85LF CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET P-Channel, Metal Oxide transistor is a compact and reliable device used to switch and amplify electronic signals.

  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 650mA, 4V
  • Input capacitance (Ciss) @ Vds: 370pF @ 10V
  • Power rating: 300mW
  • Package: 6-TSSOP, SC-88, SOT-363
  • This transistor is suitable for use in various applications such as power management, audio amplification, and motor control.

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