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RN1307

Part No RN1307
Manufacturer Toshiba Semiconductor and Storage
Catalog HOT - SALES and EOL Components (Q - R)
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 062565-RN1307
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1307 CAD Model

Description

The RN1307 is a bipolar transistor manufactured by Toshiba Semiconductor and Storage, designed for amplification and switching applications in various electronic circuits. It is known for its reliable performance and is commonly used in consumer and industrial electronics.

Applications

  • Audio amplification
  • Switching circuits
  • Signal amplification
  • Voltage regulation
  • Current amplification

Features

  • High collector current capability
  • Low saturation voltage
  • High transition frequency (fT)
  • Excellent hFE linearity
  • Surface Mount Device (SMD) package

Benefits

  • Provides efficient amplification and switching
  • Enhances audio signal quality due to its high gain and linearity
  • Improves circuit performance with its high fT
  • Simplifies circuit design with its SMD package
  • Ensures stable operation in various conditions

Additional Details

The RN1307 is available in a surface-mount package, making it suitable for compact and high-density circuit board designs. Its electrical characteristics are optimized for use in low to medium power applications. Detailed specifications, including maximum ratings, thermal characteristics, and electrical characteristics, can be found in its datasheet.

The transistor's high transition frequency (fT) ensures efficient operation at higher frequencies, making it suitable for applications requiring fast switching speeds or high-frequency amplification. Its low saturation voltage minimizes power dissipation, essential for energy-efficient designs. The excellent hFE linearity provides consistent amplification across a range of collector currents.

When using the RN1307, adhering to the recommended operating conditions specified in the datasheet is crucial for reliable and stable performance. Proper heat management may be necessary in applications where the transistor dissipates significant power. Additionally, appropriate biasing techniques should be employed to optimize the transistor's performance in specific circuit configurations.

Toshiba Semiconductor and Storage is a well-known manufacturer recognized for producing high-quality semiconductor devices. The RN1307 reflects Toshiba's commitment to delivering reliable and high-performance transistors for a wide array of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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