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Same model may have multiple batches, images only for reference.
GT10J312(Q) Real Image
Same model may have multiple batches, images only for reference.

GT10J312(Q)

Part No GT10J312(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description IGBT 600V 10A 60W TO220SM / IGBT 600 V 10 A 60 W Surface Mount TO-220SM
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>IGBTs>Single IGBTs
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
Product Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 10 A
Current - Collector Pulsed (Icm) 20 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 60 W
Switching Energy -
Input Type Standard
Td (on/off) @ 25°C 400ns/400ns
Test Condition 300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr) 200 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220SM
Base Product Number GT10J312
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50 pcs
Win Source Part Number 1382190-GT10J312(Q)
Ultra Librarian 3D Model Ultra Librarian GT10J312(Q) CAD Model

Description

The 1199326 is a single IGBT (Insulated Gate Bipolar Transistor) manufactured by Toshiba Semiconductor and Storage.

  • Product Type: Discrete Semiconductor Products
  • Type: Transistors, IGBTs
  • Package: Tube
  • Power Rating: 60W
  • Reverse Recovery Time (trr): 200ns
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current (Ic): 10A
  • Pulsed Current (Icm): 20A
  • Maximum Operating Temperature: 150°C
  • Status: Obsolete

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