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Same model may have multiple batches, images only for reference.
DF2S6P2FU,H3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

DF2S6P2FU,H3F

Part No DF2S6P2FU,H3F
Manufacturer Toshiba Semiconductor and Storage
Catalog TVS - Diodes
Description TVS DIODE 5.5VWM 23.7VC USC / 23.7V Clamp 80A (8/20µs) Ipp Tvs Diode Surface Mount USC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Circuit Protection>TVS - Diodes
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Type Zener
Unidirectional Channels 1
Voltage - Reverse Standoff (Typ) 5.5V (Max)
Voltage - Breakdown (Min) 5.6V
Voltage - Clamping (Max) @ Ipp 23.7V
Current - Peak Pulse (10/1000µs) 80A (8/20µs)
Power - Peak Pulse 1900W (1.9kW)
Power Line Protection No
Applications General Purpose
Capacitance @ Frequency 600pF @ 1MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-76, SOD-323
Supplier Device Package USC
Base Product Number DF2S6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names DF2S6P2FUH3FCT,DF2S6P2FUH3FDKR,DF2S6P2FUH3FTR,DF2S6P2FU,H3F(T,DF2S6P2FU,H3F(B
Standard Package 3,000
Win Source Part Number 1231029-DF2S6P2FU,H3F
Ultra Librarian 3D Model Ultra Librarian DF2S6P2FU,H3F CAD Model

Description

The DF2S6P2FU,H3F by Toshiba Semiconductor and Storage is a TVS diode designed for general purpose applications.

  • Package: Tape and Reel
  • Mounting: SMD (SMT)
  • Channel: Unidirectional
  • Voltage - Reverse Standoff (Typ): 5.5V (max)
  • Voltage - Breakdown (Min): 5.6V
  • Voltage - Clamping (Max) @ Ipp: 23.7V
  • Power - Peak Pulse: 1900W (1.9kW)
  • Power Line Protection: No
  • Capacitance @ Frequency: 600pF @ 1MHz
  • Current - Peak Pulse (10/1000µs): 80A (8/20μs)
  • Package/Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)

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