The 5GWJ2C48C(Q) is a Schottky Barrier Diode manufactured by Toshiba Semiconductor and Storage. This diode is designed for high-speed switching applications with low forward voltage drop.

Applications

• DC-DC converters
• Switching power supplies
• Reverse polarity protection
• Freewheeling diodes in inductive loads
• High-frequency rectifiers

Features

• Low forward voltage drop (VF)
• High switching speed
• High surge current capability
• Small surface mount package

Benefits

• Improved efficiency in power conversion applications due to the low forward voltage drop.
• Reduced switching losses due to fast recovery time.
• Enhanced system reliability with high surge current capability.
• Compact design suitable for space-constrained applications.

Additional Details

The 5GWJ2C48C(Q) Schottky diode is designed to provide efficient rectification and switching in various electronic circuits. Its low forward voltage drop minimizes power dissipation, while its fast switching speed reduces losses in high-frequency applications. The high surge current capability makes it suitable for applications where transient currents are likely to occur.

Maximum Repetitive Peak Reverse Voltage (VRRM): 40V

Maximum Average Forward Rectified Current (IF(AV)): 5A

Maximum Forward Voltage (VF): 0.55V at IF = 5A

Package: SMC (DO-214AB)

The 5GWJ2C48C(Q) is an optimal component for efficient power management and high-speed switching applications, providing a balance between performance, reliability, and size.