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2SK2883

Part No 2SK2883
Manufacturer Toshiba Semiconductor and Storage
Catalog Hard To Find
Description N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS)
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Rohs State Need to verify
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1127405-2SK2883
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK2883 CAD Model

Description

The 2SK2883 is an N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for switching applications, particularly in DC-DC converters, motor control, and power supplies. This MOSFET is characterized by its low on-resistance, which helps improve efficiency, and its ability to handle relatively high currents.

Applications:

  • DC-DC Converters
  • Motor Control
  • Power Supplies
  • Switching Regulators
  • Load Switches

Features:

  • N-Channel MOSFET
  • Low On-Resistance (R<sub>DS(on))
  • High-Speed Switching
  • Avalanche Energy Rated
  • Surface Mount Device (SMD)

Benefits:

  • Enhanced Efficiency: The low R<sub>DS(on) minimizes power loss during switching.
  • Fast Switching: Allows for higher frequency operation, reducing the size of passive components.
  • Robustness: Avalanche rating provides protection against voltage transients and inductive loads.
  • Reduced Heat Dissipation: Lower on-resistance leads to less heat generation, simplifying thermal management.
  • Compact Design: The surface mount package allows for dense board layouts.

Additional Details:

The key specifications for the 2SK2883 include drain-source voltage (V<sub>DSS), gate-source voltage (V<sub>GSS), continuous drain current (I<sub>D), and total power dissipation (P<sub>D). Refer to the Toshiba datasheet for precise electrical characteristics, thermal resistance, and package dimensions. The gate threshold voltage (V<sub>GS(th)) is an important parameter that influences the turn-on characteristics of the MOSFET. Proper gate drive circuitry is crucial for achieving optimal switching performance and preventing damage. The thermal resistance, both junction-to-ambient (R<sub>th(j-a)) and junction-to-case (R<sub>th(j-c)), are important parameters for thermal management. The 2SK2883 is typically available in a surface-mount package, enabling automated assembly. Understanding the safe operating area (SOA) is crucial for ensuring reliable operation under various load conditions. The gate charge (Q<sub>g) is a critical factor influencing switching speed and gate drive requirements. It's essential to select appropriate gate drive components to minimize switching losses and optimize performance.

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