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2SK170-BL(F)

Part No 2SK170-BL(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159111-2SK170-BL(F)
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name 2SK170BL
Introduction Date June 05, 1997
Country of Origin Japan
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian 2SK170-BL(F) CAD Model

Description

Product Overview

The 2SK170-BL(F) is a dip variant of the 2SK170-BL, tailored for those who prefer through-hole technology for ease of assembly and prototyping. This JFET combines the low-noise features of its predecessors with added physical robustness for various applications.

Features and Benefits

  • DIP Package: Facilitates easier handling during installation and prototyping, especially beneficial for PCB mounting.
  • Enhanced Durability: Suited for repeated insertion and removal in circuit designs, aiding in rapid prototyping and testing.
  • Consistent Electrical Characteristics: Offers precise control over current and minimal noise, crucial for sensitive applications.

Applications

  • Audio processing equipment requiring low-noise interfaces
  • Educational electronics kits
  • Custom RF circuit designs
  • Prototype testing platforms

Additional Information

With its robust construction in a DIP package, the 2SK170-BL(F) is ideal for education, experimental setups, and environments where ease of use is paramount. This package style’s reliability allows engineers to focus on perfecting the circuit design rather than worrying about mechanical issues related to component wear. This JFET retains all the low-noise and high-frequency performance attributes of the original 2SK170 series, making it both a practical and high-performance choice for various electronics projects.

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