The 2SC4117-GR,LF is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for low noise amplifier applications, particularly in the VHF and UHF bands. This transistor is known for its excellent high-frequency performance, low noise figure, and high gain, making it suitable for use in communication equipment and instrumentation.

Applications

• Low noise amplifiers (LNAs) for VHF and UHF receivers.
• RF front-end amplifiers in communication systems.
• Oscillator circuits for signal generation.
• Mixer circuits in frequency conversion applications.
• Instrumentation amplifiers for precision measurement.

Features

• Low Noise Figure: Minimizes noise contribution in amplifier circuits.
• High Gain: Provides significant signal amplification.
• High Transition Frequency (fT): Enables high-frequency operation.
• Silicon NPN Epitaxial Planar Structure: Offers reliable performance.
• Small Package Size: Facilitates integration into compact designs.
• Lead-Free (LF): Compliant with RoHS environmental standards.

Benefits

• Improved Receiver Sensitivity: Low noise figure enhances the ability to detect weak signals.
• Increased Signal Strength: High gain amplifies signals effectively.
• Enhanced High-Frequency Performance: High transition frequency supports operation in VHF and UHF bands.
• Reliable Operation: Silicon NPN structure ensures stable and consistent performance.
• Compact Design: Small package size enables integration into space-constrained applications.
• Environmentally Friendly: Lead-free construction complies with environmental regulations.

Additional Details

The 2SC4117-GR,LF has a typical noise figure of around 1.0 dB at 1 GHz, making it ideal for low-noise amplifier applications. Its high transition frequency (fT) allows it to operate effectively in the VHF and UHF bands. The transistor is housed in a small surface-mount package, facilitating easy integration into compact designs. The "GR" designation indicates a specific gain range, and the "LF" suffix indicates that the device is lead-free. This transistor is designed to provide reliable and consistent performance in high-frequency amplifier applications. Typical collector current is in the range of 5mA to 20mA and the Vce is around 10V.