The Toshiba 2SC3279-GR is a silicon NPN epitaxial planar type transistor. It is designed for use in low-noise amplifier applications, particularly in the VHF and UHF bands. The 'GR' suffix indicates a specific gain rank. This transistor is known for its excellent high-frequency characteristics and low-noise performance.

Applications:

• Low-Noise Amplifiers (LNA)
• VHF/UHF Amplifiers
• Oscillators
• Mixers
• RF Front-End Circuits

Features:

• NPN Epitaxial Planar Transistor
• Low Noise Figure
• High Transition Frequency (fT)
• High Power Gain
• Small Package Size

Benefits:

• Improved Signal Reception: Low noise figure enhances the sensitivity of receivers in VHF/UHF applications.
• Increased Amplifier Gain: High transition frequency and power gain provide excellent amplification performance.
• Compact Design: Small package size allows for use in space-constrained applications.
• Reliable Performance: Toshiba is a reputable manufacturer known for producing high-quality transistors.

Additional Details:

The 2SC3279-GR transistor typically comes in a small signal package, such as a SOT-23 or similar. It is characterized by its low noise figure, typically in the range of 1-2 dB at VHF/UHF frequencies. The transition frequency (fT) is a key parameter indicating the transistor's ability to amplify high-frequency signals. This transistor is commonly used in communication systems, radio receivers, and other applications where low-noise amplification is critical. It is designed to operate at a specified voltage and current, and care should be taken to ensure that these ratings are not exceeded to prevent damage to the device.