The 2SC2526 is a silicon NPN triple diffused planar transistor manufactured by Toshiba Semiconductor and Storage. It is primarily designed for high-voltage switching applications, particularly in color television horizontal output circuits and high-power switching regulators. Its robust construction and high breakdown voltage make it suitable for demanding power applications.

Applications:

• Horizontal output transistors in CRT televisions
• High-voltage switching regulators
• Inverter circuits
• High-power switching applications
• DC-DC converters

Features:

• High Collector-Emitter Voltage (VCEO): 1500V
• High Collector Current (IC): 7A
• High Collector Power Dissipation (PC): 80W
• Low Saturation Voltage (VCE(sat)): Typically 1.5V at IC = 3A
• Fast Switching Speed
• Triple Diffused Planar Construction

Benefits:

• Suitable for high-voltage applications requiring robust switching capabilities.
• High breakdown voltage ensures reliable operation in demanding environments.
• Efficient switching performance reduces power losses.
• Low saturation voltage minimizes heat generation.
• Long-term reliability in high-power applications.

Additional Details:

The 2SC2526 is typically packaged in a TO-3P or similar high-power package to facilitate efficient heat dissipation. It’s specifically designed to handle the high voltages and currents associated with horizontal deflection circuits in older CRT televisions, providing the necessary switching capabilities to drive the deflection yoke. It is also used in switching power supplies where high voltage and current switching are required. When using this transistor, it’s crucial to provide adequate heat sinking to prevent overheating and ensure long-term reliability. The device's triple diffused planar construction enhances its robustness and ability to withstand high-voltage stresses. Always refer to the datasheet for detailed specifications, application notes, and safe operating area (SOA) information.