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2SC1617

Part No 2SC1617
Manufacturer Toshiba Semiconductor and Storage
Catalog Hard To Find
Description SILICON NP TRIPLE DIFFUSED TYPE
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1125126-2SC1617
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC1617 CAD Model

Description

The 2SC1617 is a NPN silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It is generally used for high-frequency amplification applications. Its characteristics are optimized for use in RF amplifiers and oscillators.

Applications:

  • RF Amplifiers: Used in RF amplifier stages to boost signal strength.
  • Oscillators: Employed in oscillator circuits for signal generation.
  • Mixers: Utilized in mixer applications for frequency conversion.
  • Communication Equipment: Found in diverse communication devices like radios and transmitters.

Features:

  • High Transition Frequency: Operates effectively at high frequencies.
  • Low Noise Figure: Minimizes noise amplification in sensitive circuits.
  • High Power Gain: Provides significant signal amplification.
  • NPN Silicon Epitaxial Transistor: Ensures stable and predictable performance.

Benefits:

  • Improved Signal Sensitivity: Enhances the reception of weak signals with minimal added noise.
  • Efficient High-Frequency Operation: Ideal for amplification and oscillation in high-frequency ranges.
  • Broad Application Range: Suitable for a variety of RF and communication applications.
  • Reliable Performance: Manufactured by Toshiba, ensuring durability and consistent operation.

The 2SC1617 is housed in a small package designed for high-frequency performance. Key specifications include collector-base voltage (VCBO), collector-emitter voltage (VCEO), and emitter-base voltage (VEBO). Refer to the datasheet for detailed electrical characteristics and S-parameters for precise circuit design.

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