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2SA562TM-O

Part No 2SA562TM-O
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (0 - 9)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-92
RoHS Non-Compliant
Win Source Part Number 1036649-2SA562TM-O
Categories OEM Parts(0-9)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA562TM-O CAD Model

Description

The 2SA562TM-O is a PNP bipolar transistor manufactured by Toshiba Semiconductor and Storage. It is generally used for low-noise amplifier applications and general switching purposes. The 'TM' likely indicates a specific tape and reel packaging for automated assembly, and the '-O' may represent a specific gain or other electrical characteristic.

Applications:

  • Low-Noise Amplifiers: Commonly used in circuits requiring minimal signal distortion and noise, such as in audio preamplifiers and RF amplifiers.
  • Switching Circuits: Employed in applications where a signal or voltage is used to control current flow, for example, in power supplies and digital logic circuits.
  • Audio Amplification: Suitable for amplifying audio signals in a variety of devices, from portable players to home theater systems.
  • Signal Processing: Utilized in circuits that process analog signals, performing tasks such as filtering and modulation.

Features:

  • PNP Bipolar Transistor: Offers reliable performance in both amplification and switching roles.
  • Low Noise Figure: Minimizes unwanted noise in sensitive amplifier circuits.
  • High Current Gain (hFE): Provides significant amplification for low-level signals.
  • Surface Mount Package: Designed for automated assembly processes, ensuring efficient manufacturing.

Benefits:

  • Improved Signal Clarity: Enhances the quality of audio and other signals by minimizing noise.
  • Efficient Switching: Enables fast and reliable switching in digital and power control circuits.
  • Compact Design: Allows for smaller and more densely populated circuit boards.
  • Reduced Power Consumption: Operates efficiently, minimizing heat generation and extending battery life in portable devices.

Additional Details:

While specific electrical characteristics may vary depending on the exact datasheet, typical values for the 2SA562TM-O include a collector-emitter voltage (VCEO) of around -50V, a collector current (IC) of approximately -150mA, and a power dissipation (PC) of about 250mW. The surface-mount package is typically a small outline transistor (SOT) package, such as SOT-23. The specific 'O' marking should refer to the component's Gain ranking. Consult the official Toshiba datasheet for precise specifications.

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