The 1SS370 is a high-speed switching diode manufactured by Toshiba Semiconductor and Storage. This diode is designed for various high-speed switching applications due to its fast reverse recovery time and low capacitance.

Applications

• High-speed switching circuits
• Small signal rectification
• Protection circuits
• Clipping and clamping circuits
• Logic circuits

Features

• Fast reverse recovery time: Trr = 4 ns (typical)
• Low forward voltage: VF = 1.0 V (maximum) at IF = 100 mA
• Low capacitance: CT = 4.0 pF (typical)
• High reverse voltage: VR = 80 V
• Small surface mount package

Benefits

• Enables high-speed switching performance.
• Provides efficient signal rectification.
• Offers protection against voltage transients.
• Allows for compact circuit designs due to the small package size.

Additional Details

The 1SS370 is a silicon epitaxial planar diode. It offers a repetitive peak reverse voltage of 80V and a forward current of 100mA. The fast reverse recovery time ensures minimal switching losses in high-frequency applications. The low capacitance minimizes signal distortion. It is commonly used in applications requiring high-speed switching and signal processing. The diode is available in a small surface mount package, making it suitable for high-density circuit boards.