The 1SS336TE85R is a small signal schottky barrier diode manufactured by Toshiba Semiconductor and Storage. This diode is designed for high-speed switching applications and low forward voltage drop, making it suitable for various electronic circuits where efficient signal rectification and fast switching are required.

Applications

• High-speed switching circuits
• Signal detection
• Small signal rectification
• Voltage clamping
• Protection circuits

Features

• Low forward voltage (VF)
• Fast switching speed
• Small Surface Mount Device (SMD) package
• High reliability
• Low capacitance

Benefits

• Efficient signal rectification due to low forward voltage drop
• Minimal power loss in switching applications
• Space-saving design due to its small SMD package
• Stable performance over a wide range of operating conditions
• Reduced signal distortion in high-frequency circuits

Additional Details

The 1SS336TE85R schottky barrier diode is typically used in applications where a fast recovery time and low forward voltage are critical. Its compact size makes it ideal for portable devices and densely populated circuit boards. The diode’s characteristics ensure minimal power dissipation and optimal performance in high-frequency applications. It is commonly used in mobile phones, laptops, and other electronic devices requiring efficient power management and signal processing. The diode's specifications include a low forward voltage drop, fast reverse recovery time, and low junction capacitance. These parameters make it a versatile component for various high-speed and low-power applications. The device is RoHS compliant, ensuring it meets environmental regulations.