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Same model may have multiple batches, images only for reference.
TSC5302DCHC5G Real Image
Same model may have multiple batches, images only for reference.

TSC5302DCHC5G

Part No TSC5302DCHC5G
Manufacturer Taiwan Semiconductor
Catalog Transistors (BJT) - Single
Description High Voltage NPN Transistor with Diode | TRANSISTOR, NPN, 400V, 2A, 8A/A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor Corporation
Packaging Tube
Transistor Type NPN
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 400V
Vce Saturation (Maximum) at Ib, Ic 1.5V at 250mA, 1A
Current - Collector Cutoff (Maximum) 1μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 10 at 400mA, 5V
Maximum Power 25W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TO-251 (IPAK)
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1274674-TSC5302DCHC5G
Manufacturer Homepage www.taiwansemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSC5302DCHC5G CAD Model

Description

The Taiwan Semiconductor Corporation TSC5302DCHC5G is an NPN transistor.

  • Maximum Collector Current: 2A
  • Maximum Collector-Emitter Breakdown Voltage: 400V
  • Collector Cutoff Current: 1μA (ICBO)
  • Mounting: Through hole
  • Case: TO-251 (IPAK)
  • Power Dissipation: Up to 25W
  • Operating Temperature: Up to 150°C
  • Supply and Demand Status: Balanced in the open market

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