The TN0106N3 is an N-Channel enhancement mode vertical DMOS FET manufactured by Supertex, Inc. It is designed for high-voltage, low on-resistance switching applications.

Applications

• Solid State Relays
• High Voltage Switching
• LED Lighting
• Power inverters
• DC-DC Converters

Features

• N-Channel Enhancement Mode
• Low On-Resistance (RDS(on))
• High Voltage Operation
• Low Input Capacitance
• Fast Switching Speed

Benefits

• Efficient switching due to low RDS(on)
• Suitable for high voltage applications
• Reduced switching losses due to low input capacitance
• Fast response times
• Simplified drive circuitry

Technical Specifications

The TN0106N3 typically features a drain-source breakdown voltage (BVDSS) of 600V, a continuous drain current (ID) of 0.25A, and an RDS(on) of 18 Ohms at VGS = 10V. The gate-source voltage (VGS) is typically ±20V. It is available in a TO-92 package. The device operates over a temperature range from -55°C to +150°C. Datasheets are important for verifying these parameters for design.

The TN0106N3’s high breakdown voltage makes it suitable for applications involving high voltage switching. Its low RDS(on) reduces power dissipation, resulting in improved efficiency and reduced heat generation. The fast switching speed enables high-frequency operation. The device is commonly used in solid-state relays, where its high voltage capability and low on-resistance provide efficient and reliable switching. The compact TO-92 package allows for easy integration into various circuit designs. It is also used in LED lighting applications as a switch to rapidly turn on/off the LEDs.