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STU12N65M5

Part No STU12N65M5
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK | MOSFET N-CH 650V 8.5A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 8.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 430mOhm at 4.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 22nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 900pF at 100V
Power Dissipation (Maximum) 70W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I-PAK
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1262227-STU12N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STU12N65M5 CAD Model

Description

The STU12N65M5 is a cutting-edge power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This device is a part of the MDmesh™ M5 series, which is well-known for its outstanding efficiency and performance in high-voltage applications. The STU12N65M5 is designed to address the stringent requirements of modern electronic circuits, providing a perfect blend of low on-resistance and high switching speed.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650 V, the STU12N65M5 is suitable for a wide range of applications that require high voltage operation.
  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of just 0.38 Ω typical, which enhances its efficiency by minimizing conduction losses.
  • High Current Rating: It can handle continuous drain currents (I<sub>D) up to 11 A, making it capable of powering demanding loads.
  • Improved Switching Performance: The fast-switching characteristics of the MOSFET are ideal for high-frequency power conversion systems.
  • Reduced Gate Charge: The device features a low gate charge (Q<sub>g), which reduces the power required to turn the MOSFET on and off, thus saving energy.
  • TO-251 Package: The STU12N65M5 comes in a TO-251 package, known for its compactness and ability to handle high thermal loads.

Applications

The STU12N65M5 is versatile and can be used in various high-voltage applications such as:

  • Switching power supplies
  • Power converters
  • Motor drives
  • Lighting applications
  • High-performance computing

Conclusion

STMicroelectronics' STU12N65M5 is a robust and reliable power MOSFET that offers exceptional performance for a wide range of high-voltage applications. Its low on-resistance, high current capability, and efficient switching characteristics make it an excellent choice for designers looking to optimize their power management systems. The TO-251 package ensures that the device can be easily integrated into various circuit designs, providing a versatile solution for modern electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.9415 $59.7075
12+ $9.7979 $117.5748
19+ $9.4918 $180.3442
26+ $9.1857 $238.8282
33+ $8.8796 $293.0268
44+ $7.9614 $350.3016
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